Optical-switched proton logic gate:Indocyanine green decorated HSB-W5 MOFs nanosheets

作     者：Shuaikang Fan Shilin Wang Xiaobin Wang Xinyi Wan Zhou Fang Xiaodong Pi Zhizhen Ye Xinsheng Peng 范帅康;王世林;王小彬;万昕艺;方舟;皮孝东;叶志镇;彭新生

作者机构：State Key Laboratory of Silicon MaterialsSchool of Materials Science and EngineeringZhejiang UniversityHangzhou310027China Wenzhou Key Laboratory of Novel Optoelectronic and NanomaterialsInstitute of WenzhouZhejiang UniversityWenzhou325006China 

出 版 物：《Science China Materials》 (中国科学（材料科学（英文版）)

年 卷 期：2022年第65卷第4期

页      面：1076-1086页

核心收录：

学科分类：080902[工学-电路与系统] 07[理学] 0809[工学-电子科学与技术（可授工学、理学学位）] 070205[理学-凝聚态物理] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 0702[理学-物理学] 

基　　金：supported by the National Natural Science Foundations of China(NSFC 21875212) the Key Program of National Natural Science and Foundation(NSFC 51632008) Major R&D plan of Zhejiang Natural Science Foundation(LD18E020001) the Fundamental Research Funds for the Central Universities 

主　　题：HSB-W5 MOF proton conductivity indocyanine green logic gate photothermal effect 

摘      要：Proton conduction controlled by light is important for advanced applications in sensors and information processing *** herein report a metal-organic framework(MOF)thin film by introducing indocyanine green dye into HSB-W5(HSB=hydrogenated Schiff base)matrix(ICG@HSB-W5)to construct a series of basic logic gates(NOT,NAND,and NOR)on account of its good photothermal conversion ability and photo-controlled proton *** proton conductivity of ICG@HSB-W5 thin film is 25 times higher than that of the pristine HSB-W5 thin film and responses efficiently to *** addition,the change of proton conductivity is very large with an ON/OFF ratio above1000 and enough to be distinguished to build logic *** this logic gate system,808-and 405-nm lasers are used as inputs and the proton conductivity is used as output signal with different *** electrical output signal is convenient and available to be received and *** offers a new route for the design of molecular logic gates based on MOF and facilitates the construction of proton-based logic gate or more complicated logic devices.