Material removal at atomic and close-to-atomic scale by highenergy photon:a case study using atomistic-continuum method
作者机构:State Key Laboratory of Precision Measuring Technology and InstrumentsLaboratory of MicroNano Manufacturing Technology(MNMT)Tianjin UniversityTianjin 300072People’s Republic of China Centre of MicroNano Manufacturing Technology(MNMTDublin)School of Mechanical and Materials EngineeringUniversity College DublinDublin 4Ireland
出 版 物:《Advances in Manufacturing》 (先进制造进展(英文版))
年 卷 期:2022年第10卷第1期
页 面:59-71页
核心收录:
学科分类:070207[理学-光学] 07[理学] 08[工学] 0803[工学-光学工程] 0702[理学-物理学]
基 金:supported financially by the National Natural Science Foundation(Grant No.52035009) the‘111’project of the State Administration of Foreign Experts Affairs and the Ministry of Education of China(Grant No.B07014)
主 题:Extreme ultraviolet(EUV) Molecular dynamics(MD) Two-temperature model(TTM)Photoionization Atomic and close-to-atomic scale manufacturing(ACSM)
摘 要:Extreme ultraviolet(EUV)light plays an important role in various fields such as material characterization and semiconductor *** is also a potential approach in material fabrication at atomic and close-to-atomic ***,the material removal mechanism has not yet been fully *** paper studies the interaction of a femtosecond EUV pulse with monocrystalline silicon using molecular dynamics(MD)coupled with a two-temperature model(TTM).The photoionization mechanism,an important process occurring at a short wavelength,is introduced to the simulation and the results are compared with those of the traditional *** processes including photoionization,atom desorption,and laser-induced shockwave are discussed under various fluencies,and the possibility of single atomic layer removal is *** show that photoionization and the corresponding bond breakage are the main reasons of atom *** method developed can be further employed to investigate the interaction between high-energy photons and the material at moderate fluence.