High-performance electronics and optoelectronics of monolayer tungsten diselenide full film from pre-seeding strategy

作     者：Shu Zhang Jinbo Pang Qilin Cheng Feng Yang Yu Chen Yu Liu Yufen Li Thomas Gemming Xiaoyan Liu Bergoi Ibarlucea Jiali Yang Hong Liu Weijia Zhou Gianaurelio Cuniberti Mark H.Rümmeli 

作者机构：Collaborative Innovation Center of Technology and Equipment for Biological Diagnosis and Therapy in Universities of ShandongInstitute for Advanced Interdisciplinary Research(iAIR)University of JinanJinanChina School of Chemistry and Chemical EngineeringUniversity of JinanJinanChina Department of ChemistrySouthern University of Science and TechnologyShenzhenChina Institute of High Energy PhysicsChinese Academy of SciencesBeijingChina College of EnergySoochow Institute for Energy and Materials InnovationsSoochow UniversitySuzhouChina Key Laboratory of Advanced Carbon Materials and Wearable Energy Technologies of Jiangsu ProvinceSoochow UniversitySuzhouChina Institute for Complex MaterialsLeibniz Institute for Solid State and Materials Research DresdenDresdenGermany Institute for Materials Science and Max Bergmann Center of BiomaterialsTechnische Universität DresdenDresdenGermany Center for Advancing Electronics DresdenTechnische Universität DresdenDresdenGermany State Key Laboratory of Crystal MaterialsCenter of Bio&Micro/Nano Functional MaterialsShandong UniversityJinanChina Dresden Center for Computational Materials ScienceTechnische Universität DresdenDresdenGermany Dresden Center for Intelligent Materials(GCL DCIM)Technische Universität DresdenDresdenGermany Centre of Polymer and Carbon MaterialsPolish Academy of SciencesZabrzePoland Institute for Complex MaterialsIFW DresdenDresdenGermany Institute of Environmental Technology(CEET)VŠB-Technical University of OstravaOstravaCzech Republi 

出 版 物：《InfoMat》 (信息材料（英文）)

年 卷 期：2021年第3卷第12期

页      面：1455-1469页

核心收录：

学科分类：081704[工学-应用化学] 07[理学] 08[工学] 0817[工学-化学工程与技术] 0703[理学-化学] 070301[理学-无机化学] 

基　　金：Chinesisch-Deutsche Zentrum für Wissenschaftsförderung,Grant/Award Number:GZ 1400 European Regional Development Fund,Grant/Award Number:CZ.02.1.01/0.0/0.0/16_019/0000853 National Key Research and Development Program of China,Grant/Award Number:2017YFB0405400 National Natural Science Foundation of China,Grant/Award Numbers:51802116,52022037,52071225,52002165 Natural Science Foundation of Shandong Province,Grant/Award Number:ZR2019BEM040 Taishan Scholars Project Special Funds,Grant/Award Number:tsqn201812083 the Project of“20 items of University”of Jinan,Grant/Award Number:2018GXRC031 the National Science Center Southern University of Science and Technology the Innovation Project for Guangdong Provincial Department of Education,Grant/Award Number:2019KTSCX155 Guangdong Provincial Key Laboratory of Catalysis,Grant/Award Number:2020B121201002 Beijing National Laboratory for Molecular Science,Grant/Award Number:BNLMS202013 

主　　题：activation energy chemical vapor deposition field-effect transistor pre-seeding thermodynamics tungsten diselenide 

摘      要：Tungsten diselenide (WSe2) possesses extraordinary electronic properties forapplications in electronics, optoelectronics, and emerging exciton physics. Thesynthesis of monolayer WSe2 film is of topmost for device arrays and integratedcircuits. The monolayer WSe2 film has yet been reported by thermal chemicalvapor deposition (CVD) approach, and the nucleation mechanism remainsunclear. Here, we report a pre-seeding strategy for finely regulating the nucleidensity at an early stage and achieving a fully covered film after chemicalvapor deposition growth. The underlying mechanism is heterogeneous nucle-ation from the pre-seeding tungsten oxide nanoparticles. At first, we optimized the precursor concentration for pre-seeding. Besides, we confirmed the superi-ority of the pre-seeding method, compared with three types of substrate pre-treatments, including nontreatment, sonication in an organic solvent, andoxygen plasma. Eventually, the high-quality synthetic WSe2 monolayer filmexhibits excellent device performance in field-effect transistors and photodetec-tors. We extracted thermodynamic activation energy from the nucleation andgrowth data. Our results may shed light on the wafer-scale production ofhomogeneous monolayer films of WSe2, other 2D materials, and their van derWaals heterostructures.