Investigations on ion implantation-induced strain in rotated Y-cut LiNbO_(3) and LiTaO_(3)

作     者：Zhongxu Li Kai Huang Yanda Ji Yang Chen Xiaomeng Zhao Min Zhou Tiangui You Shibin Zhang Xin Ou 李忠旭;黄凯;吉彦达;陈阳;赵晓蒙;周民;游天桂;张师斌;欧欣

作者机构：State Key Laboratory of Functional Materials for InformaticsShanghai Institute of Microsystem and Information TechnologyChinese Academy of Sciences(CAS)Shanghai 200050China MIIT Key Laboratory of Aerospace Information Materials and Physics&College of ScienceNanjing University of Aeronautics and AstronauticsNanjing 211106China Center of Materials Science and Optoelectronics EngineeringUniversity of Chinese Academy of SciencesBeijing 100049China Shanghai Novel Silicon Integration Technology Co.Ltd.JiadingShanghaiChina 

出 版 物：《Chinese Physics B》 (中国物理B（英文版）)

年 卷 期：2021年第30卷第10期

页      面：79-84页

核心收录：

学科分类：081702[工学-化学工艺] 080902[工学-电路与系统] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 0817[工学-化学工程与技术] 

基　　金：supported by the National Key Research and Development Program of China(Grant No.2019YFB1803902) the National Natural Science Foundation of China(Grant Nos.11905282,61874128,61851406,11705262,and 6187407) the Frontier Science Key Program of CAS(Grant Nos.QYZDY-SSWJSC032 and ZDBS-LY-JSC009) Chinese-Austrian Cooperative Research and Development Project(Grant No.GJHZ201950) the Program of Shanghai Academic Research Leader(Grant No.19XD1404600) K.C.Wong Education Foundation(Grant No.GJTD-2019-11),Shanghai Sailing Program(Grant Nos.19YF1456200 and 19YF1456400) Shanghai Science and Technology Innovation Action Plan Program(Grant No.19XD1404600) 

主　　题：x-ray diffraction(XRD) implantation strain piezoelectric 

摘      要：The monocrystalline LiNbO_(3)(LN)and LiTaO_(3)(LT)plates have been qualified as a kind of material platform for high performance RF filter that is considerable for the 5G *** and LT thin films are usually transferred on handle wafers by combining ion-slicing and wafer bonding technique to form a piezoelectric on insulator(POI)*** ion implantation is a key process and the implantation-induced strain is essential for the layer ***,we reported the strain profile of ion implanted rotated Y-cut LN and *** ion implantation generates the out-of-plane tensile strain of the sample surface and(006)plane,while both the tensile and compressive strain are observed on the(030)*** implanted ions redistributed due to the anisotropy of LN and LT,and induce the main tensile normal to the(006)***,the(030)planes are contracted due to the Poisson effect with the interstitial ions disturbing and mainly show a compressive strain profile.