Simulation study of new 3-terminal devices for high speed STT-RAM

作     者：张树超 胡江峰 陈培毅 邓宁 

作者机构：Institute of MicroelectronicsTsinghua University Data Storage InstituteA~*STAR 

出 版 物：《Journal of Semiconductors》 (半导体学报（英文版）)

年 卷 期：2011年第32卷第7期

页      面：46-48页

核心收录：

学科分类：08[工学] 081201[工学-计算机系统结构] 0812[工学-计算机科学与技术（可授工学、理学学位）] 

基　　金：Project supported by the National High Technology Research and Development Program of China(No.2009AA01 A403) the Foundation for Key Program of Ministry of Education,China(No.20091770305) the Fok Ying-Tong Education Foundation,China(No.114011) 

主　　题：spin transfer torque non-volatile memory spin valve micro-magnetic simulation 

摘      要：To improve the performance of spin transfer torque random access memory（STT-RAM）,especially writing speed,we propose three modified 3-terminal STT-RAM cells.A magnetic dynamic process in the new structures was investigated through micro-magnetic *** best switching speed of the new structures is 120%faster than that of the rectangular 3-terminal *** optimized 3-terminal device offers high speed while maintaining the high reliability of the 3-terminal structure.