Highly efficient transparent quantum-dot light-emitting diodes based on inorganic double electron-transport layers

作     者：Nan Zhang Xiangwei Qu Quan Lyu Kai Wang Xiao Wei Sun 

作者机构：Peng Cheng LaboratoryShenzhen 518055China Guangdong University Key Laboratory for Advanced Quantum Dot Displays and LightingGuangdong-Hong Kong-Macao Joint Laboratory for Photonic-Thermal-Electrical Energy Materials and Devicesand Department of Electrical and Electronic EngineeringSouthern University of Science and TechnologyShenzhen 518055China Key Laboratory of Energy Conversion and Storage Technologies(Southern University of Science and Technology)Ministry of EducationShenzhen 518055China Huawei Technologies Research&Development(UK)Ltd.Ipswich IP53REUK 

出 版 物：《Photonics Research》 (光子学研究（英文版）)

年 卷 期：2021年第9卷第10期

页      面：1979-1983页

核心收录：

学科分类：08[工学] 0805[工学-材料科学与工程（可授工学、理学学位）] 0703[理学-化学] 0803[工学-光学工程] 0702[理学-物理学] 0812[工学-计算机科学与技术（可授工学、理学学位）] 

基　　金：National Key Research and Development Program of China(2016YFB0401702,2017YFE0120400) National Natural Science Foundation of China(61674074,61704170,61875082) Natural Science Foundation of Guangdong Province(2017B030306010) Guangdong University Key Laboratory for Advanced Quantum Dot Displays and Lighting(2017KSYS007) Shenzhen Peacock Team Project(KQTD2016030111203005) Development and Reform Commission of Shenzhen Project(1395) 

主　　题：diodes double quantum 

摘      要：Herein,we report the fabrication of high-performance transparent quantum-dot light-emitting diodes(Tr-QLEDs)with ZnO/ZnMgO inorganic double electron-transport layers(ETLs).The ETLs effectively suppress the excess electron injection and facilitate charge balance in the *** thick ETLs as buffer layers can also withstand the plasma-induced damage during the indium tin oxide *** factors collectively contribute to the development of Tr-QLEDs with improved *** a result,our Tr-QLEDs with double ETLs exhibited a high transmittance of 82%at 550 nm and a record external quantum efficiency of 11.8%,which is 1.27 times higher than that of the devices with pure ZnO *** results indicate that the developed ZnO/ZnMgO inorganic double ETLs could offer promising solutions for realizing high-efficiency Tr-QLEDs for next-generation display devices.