Semiconductor Optical Amplifier and Gain Chip Used in Wavelength Tunable Lasers

作     者：SATO Kenji ZHANG Xiaobo SATO Kenji;ZHANG Xiaobo

作者机构：ZTE PhotonicsNanjing 210000China Southeast UniversityNanjing 211189China 

出 版 物：《ZTE Communications》 (中兴通讯技术（英文版）)

年 卷 期：2021年第19卷第3期

页      面：81-87页

学科分类：080903[工学-微电子学与固体电子学] 080901[工学-物理电子学] 080902[工学-电路与系统] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080401[工学-精密仪器及机械] 0804[工学-仪器科学与技术] 0803[工学-光学工程] 

主　　题：external cavity gain chip saturation power semiconductor optical amplifier tunable laser 

摘      要：The design concept of semiconductor optical amplifier(SOA)and gain chip used in wavelength tunable lasers(TL)is discussed in this *** design concept is similar to that of a conventional SOA or a laser;however,there are a few different *** SOA in front of the tunable laser should be polarization dependent and has low optical confinement *** obtain wide gain bandwidth at the threshold current,the gain chip used in the tunable laser cavity should be something between SOA and fixed-wavelength laser design,while the fixed-wavelength laser has high optical confinement *** discussion is given with basic equations and some simulation results on saturation power of the SOA and gain bandwidth of gain chip are shown.