Effect of Mo doping on phase change performance of Sb_(2)Te_(3)

作     者：Wan-Liang Liu Ying Chen Tao Li Zhi-Tang Song Liang-Cai Wu 刘万良;陈莹;李涛;宋志棠;吴良才

作者机构：State Key Laboratory of Functional Materials for InformaticsShanghai Institute of Micro-system and Information TechnologyChinese Academy of SciencesShanghai 200050China University of Chinese Academy of SciencesBeijing 100049China College of ScienceDonghua UniversityShanghai 201620China Member of Magnetic Confinement Fusion Research CenterMinistry of EducationChina 

出 版 物：《Chinese Physics B》 (中国物理B（英文版）)

年 卷 期：2021年第30卷第8期

页      面：440-443页

核心收录：

学科分类：07[理学] 070205[理学-凝聚态物理] 0702[理学-物理学] 

基　　金：Project supported by the National Key Research and Development Program of China(Grant Nos.2017YFB0701703 and 2017YFA0206101) the National Natural Science Foundation of China(Grant No.61874151) the Science and Technology Council of Shanghai,China(Grant Nos.19JC1416801 and 19JC1416802) 

主　　题：phase-change memory Sb_(2)Te_(3) thin films nanocomposites 

摘      要：Mo,as a dopant,is doped into SbTe to improve its thermal *** is shown in this paper that the Mo-doped Sb_(2)Te_(3)(Mo_(0.26)Sb_(2)Te_(3),MST)material possesses phase change memory(PCM)*** has better thermal stability than Sb_(2)Te_(3)(ST)and will crystallize only when the annealing temperature is higher than 250℃.With the good thermal stability,MST-based PCM cells have a fast crystallization time of 6 ***,endurance up to 4×10^(5) cycles with a resistance ratio of more than one order of magnitude makes MST a promising candidate for PCM applications.