Characterization of CdZnTeSe Nuclear Detector Chemically Etched in Bromine Methanol
Characterization of CdZnTeSe Nuclear Detector Chemically Etched in Bromine Methanol作者机构：Department of Physics Federal University of Petroleum Resources Effurun Nigeria Department of Mechanical Engineering Alabama A&M University Huntsville USA Nuclear Engineering and Radiological Science Center Alabama A&M University Huntsville USA Department of Electrical and Computer Engineering University of South Alabama Mobile USA Department of Nonproliferation and National Security Brookhaven National Laboratory Upton USA Science and Technology Directorate Savannah River National Laboratory Aiken USA Department of Bioengineering Stanford University Stanford USA Biological and Environmental Sciences Department Alabama A&M University Huntsville USA
出 版 物：《Materials Sciences and Applications》 (材料科学与应用期刊（英文）)
年 卷 期：2021年第12卷第8期
页 面：363-373页
学科分类：07[理学] 070202[理学-粒子物理与原子核物理] 0702[理学-物理学]
主 题：CdZnTeSe Chemical Etching Energy Resolution Gamma-Ray Spectroscopy Infrared Imaging Nuclear Detectors
摘 要：Semiconductor nuclear radiation detectors made from tertiary and quaternary compounds of cadmium telluride (CdTe) can operate at room temperature without cryogenic cooling. One of such materials that have become of great interest is cadmium zinc telluride selenide (CdZnTeSe). Compared to other CdTe-based materials, such as cadmium zinc telluride (CdZnTe), CdZnTeSe can be grown with much less Te inclusions and sub-grain boundary networks. Chemical etching is often used to smoothen wafer surfaces during detector fabrication. This paper presents the characterization of CdZnTeSe that is chemically etched using bromine methanol solution. Infrared imaging shows that the wafer has no sub-grain boundary networks that often limit detector performance. The current-voltage (I-V) characterization experiment gave a resistivity of 4.6 × 1010 Ω-cm for the sample. The I-V curve was linear in the ±10 to ±50 volts range. An energy resolution of 7.2% was recorded at 100 V for the 59.6-keV gamma line of 241Am.
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