Deep-ultraviolet and visible dual-band photodetectors by integrating Chlorin e6 with Ga_(2)O_(3)

作     者：赵越 臧金浩 杨珣 陈雪霞 陈彦成 李凯永 董林 单崇新 Yue Zhao;Jin-Hao Zang;Xun Yang;Xue-Xia Chen;Yan-Cheng Chen;Kai-Yong Li;Lin Dong;Chong-Xin Shan

作者机构：Key Laboratory of Materials PhysicsMinistry of EducationHenan Key Laboratory of Diamond Optoelectronic Materials and DevicesSchool of Physics and MicroelectronicsZhengzhou UniversityZhengzhou 450052China 

出 版 物：《Chinese Physics B》 (中国物理B（英文版）)

年 卷 期：2021年第30卷第7期

页      面：631-635页

核心收录：

学科分类：08[工学] 0805[工学-材料科学与工程（可授工学、理学学位）] 0803[工学-光学工程] 0704[理学-天文学] 

主　　题：deep ultraviolet visible dual-band photodetector Ga_(2)O_(3) 

摘      要：Gallium oxide(Ga_(2)O_(3))is a promising material for deep-ultraviolet(DUV)detection.In this work,Chlorin e6(Ce6)has been integrated with Ga_(2)O_(3)to achieve a DUV and visible dual-band photodetector,which can achieve multiple target information and improve the recognition rate.The photodetector shows two separate response bands at 268 nm and 456 nm.The DUV response band has a responsivity of 9.63 A/W with a full width at half maximum(FWHM)of 54.5 nm;the visible response band has a responsivity of 1.17 A/W with an FWHM of 45.3 nm.This work may provide a simple way to design and fabricate photodetectors with dual-band response.