Observation of large in-plane anisotropic transport in van der Waals semiconductor Nb_(2)SiTe_(4)

作     者：Kaiyao Zhou Jun Deng Long Chen Wei Xia Yanfeng Guo Yang Yang Jian-Gang Guo Liwei Guo 周楷尧;邓俊;陈龙;夏威;郭艳峰;杨洋;郭建刚;郭丽伟

作者机构：Beijing National Laboratory for Condensed Matter PhysicsInstitute of PhysicsChinese Academy of SciencesBeijing 100190China University of Chinese Academy of SciencesBeijing 100049China Songshan Lake Materials LaboratoryDongguan 523808China School of Physical Science and TechnologyShanghaiTech UniversityShanghai 201210China ShanghaiTech Laboratory for Topological PhysicsShanghaiTech UniversityShanghai 201210China 

出 版 物：《Chinese Physics B》 (中国物理B（英文版）)

年 卷 期：2021年第30卷第8期

页      面：456-461页

核心收录：

学科分类：07[理学] 070205[理学-凝聚态物理] 0702[理学-物理学] 

基　　金：Project supported by the National Key Research and Development Program of China(Grant Nos.2018YFE0202600,2016YFA0300600,and 2017YFA0304700) by the National Natural Science Foundation of China(Grant Nos.51922105,51772322,and 11704401) Beijing Natural Science Foundation(Grant No.Z200005) 

主　　题：carrier mobility anisotropic transport Raman spectroscopy 

摘      要：Two-dimensional(2D)van der Waals material is a focus of research for its widespread application in optoelectronics,memories,and *** ternary compound Nb_(2)SiTe_(4) is a van der Waals semiconductor with excellent air stability and small cleavage energy,which is suitable for preparing a few layers counterpart to explore novel ***,properties of bulk Nb_(2)SiTe_(4) with large in-plane electrical anisotropy are *** is found that hole carriers dominate at a temperature above 45 K with a carrier active energy of 31.3 *** carrier mobility measured at 100 K is about 213 cm^(2)·V^(-1)·s^(-1) in bulk Nb_(2)SiTe_(4),higher than the reported *** a thin flake Nb_(2)SiTe_(4),the resistivity ratio between the crystalline axes of a and b is reaching about 47.3 at 2.5 K,indicating that there exists a large anisotropic transport behavior in their basal *** novel transport properties provide accurate information for modulating or utilizing Nb_(2)SiTe_(4) for electronic device applications.