Thermodynamic criterion for searching high mobility two-dimensional electron gas at KTaO_(3)interface

作     者：时文潇 张慧 齐少锦 张金娥 黄海林 沈保根 陈沅沙 孙继荣 Wen-Xiao Shi;Hui Zhang;Shao-Jin Qi;Jin-E Zhang;Hai-Lin Huang;Bao-Gen Shen;Yuan-Sha Chen;Ji-Rong Sun

作者机构：Beijing National Laboratory for Condensed Matter Physics and Institute of PhysicsChinese Academy of SciencesBeijing 100190China School of Physical SciencesUniversity of Chinese Academy of SciencesBeijing 100049China Fujian Innovation AcademyChinese Academy of SciencesFuzhou 350108China Songshan Lake Materials LaboratoryDongguan 523808China Spintronics InstituteUniversity of JinanJinan 250022China 

出 版 物：《Chinese Physics B》 (中国物理B（英文版）)

年 卷 期：2021年第30卷第7期

页      面：70-73页

核心收录：

学科分类：07[理学] 070205[理学-凝聚态物理] 0805[工学-材料科学与工程（可授工学、理学学位）] 0704[理学-天文学] 0702[理学-物理学] 

基　　金：the National Key R&D Program of China(Grant Nos.2016YFA0300701,2017YFA0206304,and 2018YFA0305704) the National Natural Science Foundation of China(Grant Nos.11934016,111921004,51972335,and 11674378) the Key Program of the Chinese Academy of Sciences(Grant Nos.XDB33030200 and QYZDY-SSW-SLH020)。 

主　　题：two-dimensional electron gas oxygen vacancies thermodynamic criterion Hall mobility 

摘      要：Two-dimensional electron gases(2 DEGs)formed at the interface between two oxide insulators present a promising platform for the exploration of emergent phenomena.While most of the previous works focused on SrTiO_(3-)based 2 DEGs,here we took the amorphous-ABO_(3)/KTaO_(3)system as the research object to study the relationship between the interface conductivity and the redox property of B-site metal in the amorphous film.The criterion of oxide-oxide interface redox reactions for the B-site metals,Zr,Al,Ti,Ta,and Nb in conductive interfaces was revealed:the formation heat of metal oxide,ⅢH_(f)^(o),is lower than-350 kJ/(mol O)and the work function of the metalΦis in the range of 3.75 eVΦ4.4 eV.Furthermore,we found that the smaller absolute value ofⅢH_(f)^(o)and the larger value ofΦof the B-site metal would result in higher mobility of the two-dimensional electron gas that formed at the corresponding amorphous-ABO_(3)/KTaO_(3)interface.This finding paves the way for the design of high-mobility all-oxide electronic devices.