Defects inducing anomalous exciton kinetics in monolayer WS_(2)
背叛在单层 WS2 导致异常激子动力学作者机构：School of Physics and TechnologyCenter for Nanoscience and Nanotechnologyand Key Laboratory of Artificial Micro-and Nanostructures of Ministry of EducationWuhan UniversityWuhan 430072China Institute of Microscale OptoelectronicsShenzhen UniversityShenzhen 518060China Center for Spintronics and Quantum SystemState Key Laboratory for Mechanical Behavior of MaterialsSchool of Materials Science and EngineeringXian Jiaotong UniversityXian 710049China
出 版 物：《Nano Research》 (纳米研究（英文版）)
年 卷 期：2022年第15卷第2期
页 面：1616-1622页
核心收录：
基 金：supported by the Ministry of Science and Technology of China(No.2019YFE0120300) the National Natural Science Foundation of China(No.11904266) the Fundamental Research Funds for the Central Universities(No.2042021kf0202) the Open Project Program of Wuhan National Laboratory for Optoelectronics(No.2020WNLOKF014)
主 题：transition metal dichalcogenides defect exciton dynamics transient absorption microscopy
摘 要：Two-dimensional(2D)transition metal dichalcogenide(TMD)has emerged as an effective optoelectronics material due to its novel optical *** the role of defects in exciton kinetics is crucial for achieving high-efficiency TMD ***,we observe defects induced anomalous power dependence exciton dynamics and spatial distribution in hexagonal heterogeneous WS_(2).With transient absorption microscopy study,we illustrate that these phenomena originate from the competition between radiative and defect-related non-radiative *** understand the physics behind this,a decay model is introduced with two defect-related channels,which demonstrates that more excitons decay through non-radiative channels in the dark region than the bright *** work reveals the mechanisms of anomalous exciton kinetics by defects and is instrumental for understanding and exploiting excitonic states in emerging 2D semiconductors.
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