High thermoelectric figure of merit ZT>1 in SnS polycrystals
作者机构：State Key Laboratory of New Ceramics and Fine ProcessingSchool of Materials Science and EngineeringTsinghua UniversityBeijing100084China School of Materials Science and EngineeringBeihang UniversityBeijing100191China
出 版 物：《Journal of Materiomics》 (无机材料学学报（英文）)
年 卷 期：2020年第6卷第1期
页 面：77-85页
核心收录：
学科分类：0808[工学-电气工程] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 0817[工学-化学工程与技术] 0806[工学-冶金工程] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 0703[理学-化学] 0702[理学-物理学]
基 金：supported by the Basic Science Center Project of Natural Science Foundation of China(51788104) the National Key R&D Program of China(2018YFB0703603).
主 题：Thermoelectric tin sulfide Spark plasma sintering Nanoprecipitation Dislocation
摘 要：Eco-friendly tin sulfide(SnS)has attracted increasing attention in the thermoelectric community because of its elemental abundance and analogous crystal structure to SnSe as a new thermoelectric material.However,so far no high dimensionless thermoelectric figure of merit ZT1 was reported in SnS polycrystals.This work found an effective strategy for enhancing the thermoelectric performance of ptype polycrystalline SnS by Ag doping and vacancy engineering,leading to three orders of magnitude increase in carrier concentration and optimized effective mass and carrier mobility.As a result of the enhanced electrical conductivity,three times higher power factor ~3.85 μW/cm K^(2) at 877 K is realized in Sn_(0.995)Ag_(0.005)S sample.Interestingly,nanostructuring with Ag nano-precipitates were formed in the Agdoped SnS sample.Moreover,with introducing Sn vacancies in the crystal structure of Sn_(0.995-vac)Ag_(0.005)S,the power factor further enhanced to~4.25 μW/cm K^(2).In addition to the low-frequency phonons scattering by Ag nano-precipitates,dislocations strengthens the scattering of mid-frequency phonon,leading to an ultralow lattice thermal conductivity 0.5 W/m K above 800 K and a record high ZT up to 1.1 at 877 K in Sn_(0.99)Ag_(0.005)S polycrystals.
维普期刊数据库