Photoelectrochemical behaviour of Cdln2S4 films deposited by pulse electrodeposition using non-aqueous electrolyte

作     者：Chockalingam JAYANTHI Swaminathan DHANAPANDIAN Kollegal Ramakrishna MURALI 

作者机构：Department of Physics Government Arts College Dharmapud 636705 Tamilnadu India Department of Physics Annamalai University Annamalainagar 608002 Tamilnadu India Electrochemical Materials Science Division. Central Electrochemical Research Institute. Karaikudi 630006 Tamilnadu. India 

出 版 物：《Frontiers of Materials Science》 (材料学前沿（英文版）)

年 卷 期：2013年第7卷第4期

页      面：379-386页

核心收录：

学科分类：081702[工学-化学工艺] 08[工学] 0817[工学-化学工程与技术] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 0702[理学-物理学] 

主　　题：thin film semiconductor Cdln2S4 photoelectrochemical (PEC) cell 

摘      要：Cdln2S4 films were deposited by the pulse electrodeposition technique on tin oxide-coated glass substrates, at different duty cycles in the range of 6%-50%. The deposition potential was -0.7 V vs, saturated calomel electrode （SCE） using non-aqueous di（ethylene glycol） electrolyte, XRD analysis of the films indicated polycrystalline nature. Grain size, strain and dislocation density were evaluated from the XRD data, EDX analysis of the surface composition confirms the formation of stoichiometric Cdln2S4 films, Optical studies show a direct band-gap values in the range of 2.14-2.23 eV for the films deposited at different duty cycles. Room temperature resistivity of the films was in the range of 40-21 *** with the increase of duty cycle. Photoelectrochemical （PEC） solar cells constructed with the films deposited at 50% duty cycle and post-heat-treated at 500~C indicated open circuit voltage （Voc） of 0.595 V, short circuit current density （Jsc） of 6.20 ***-2, fill factor （if） of 0.61, efficiency （t/） of 3.75%, series resistance （Rs） of 4Q and shunt resistance （Rsh） of 2.50kQ. Making use of the advantages of pulse electrodeposition it can be used to deposit nanocrystalline films which can be employed in optoelectronic and photovoltaic devices.