Visualizing the in-Gap States in Domain Boundaries of Ultra-Thin Topological Insulator Films

作     者：Jun Zhang Junbo Cheng Shuaihua Ji Yeping Jiang 仉君;程俊博;季帅华;蒋烨平

作者机构：Key Laboratory of Polar Materials and DevicesDepartment of ElectronicSchool of Physics and Electronic ScienceEast China Normal UniversityShanghai 200241China State Key Laboratory of Low-Dimensional Quantum PhysicsDepartment of PhysicsTsinghua UniversityBeijing 100084China 

出 版 物：《Chinese Physics Letters》 (中国物理快报（英文版）)

年 卷 期：2021年第38卷第7期

页      面：106-109页

核心收录：

学科分类：07[理学] 070205[理学-凝聚态物理] 0702[理学-物理学] 

基　　金：Supported by the National Natural Science Foundation of China(Grant Nos.61804056 and 92065102) the Open Research Fund Program of the State Key Laboratory of Low-Dimensional Quantum Physics,Tsinghua University 

主　　题：spectroscopy temperature properties 

摘      要：Ultra-thin topological insulators provide a platform for realizing many exotic phenomena such as the quantum spin Hall effect,and quantum anomalous Hall *** effects or states are characterized by quantized transport behavior of edge ***,although these states have been realized in various systems,the temperature for the edge states to be the dominating channel in transport is extremely low,contrary to the fact that the bulk gap is usually in the order of a few tens of milli-electron *** must be other in-gap conduction channels that do not freeze out until a much lower *** we grow ultra-thin topological insulator Bi_(2)Te_(3) and Sb_(2)Te_(3)films by molecular beam epitaxy and investigate the structures of domain boundaries in these *** scanning tunneling microscopy and spectroscopy we find that the domain boundaries with large rotation angles have pronounced in-gap bound states,through which one-dimensional conduction channels are suggested to form,as visualized by spatially resolved *** work indicates the critical role played by domain boundaries in degrading the transport properties.