Effects of post-annealing on crystalline and transport properties of Bi_(2)Te_(3) thin films

作     者：Qi-Xun Guo Zhong-Xu Ren Yi-Ya Huang Zhi-Chao Zheng Xue-Min Wang Wei He Zhen-Dong Zhu Jiao Teng 郭奇勋;任中旭;黄意雅;郑志超;王学敏;何为;朱振东;滕蛟

作者机构：Department of Material Physics and ChemistryUniversity of Science and Technology BeijingBeijing 100083China Collaborative Innovation Center of Advanced Steel TechnologyUniversity of Science and Technology BeijingBeijing 100083China Beijing National Laboratory for Condensed Matter Physics and Institute of PhysicsChinese Academy of SciencesBeijing 100190China National Institute of MetrologyBeijing 100029China 

出 版 物：《Chinese Physics B》 (中国物理B（英文版）)

年 卷 期：2021年第30卷第6期

页      面：536-540页

核心收录：

学科分类：08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 

基　　金：supported by the National Natural Science Foundation of China (Grant Nos. 52072030, 52071025, and 51871018) the Beijing Outstanding Young Scientists Projects (Grant No. BJJWZYJH01201910005018) Beijing Natural Science Foundation,China (Grant No. Z180014) the Science and Technology Innovation Team Program of Foshan (Grant No. FSOAA-KJ919-4402-0087) Beijing Laboratory of Metallic Materials and Processing for Modern Transportation 

主　　题：topological insulator magnetron sputtering post annealing Kiessig fringes low carrier density weak antilocalization 

摘      要：A well-established method is highly desirable for growing topological insulator thin films with low carrier density on a wafer-level scale. Here, we present a simple, scalable method based on magnetron sputtering to obtain high-quality Bi_(2) Te_(3) films with the carrier density down to 4.0 × 10^(13) cm^(-2). In contrast to the most-used method of high substrate temperature growth, we firstly sputtered Bi_(2) Te_(3) thin films at room temperature and then applied post-annealing. It enables the growth of highly-oriented Bi_(2) Te_(3) thin films with larger grain size and smoother interface. The results of electrical transport show that it has a lower carrier density as well as a larger coherent length(~ 228 nm, 2 K). Our studies pave the way toward large-scale, cost-effective production of Bi_(2) Te_(3) thin films to be integrated with other materials in wafer-level scale for electronic and spintronic applications.