Enhanced efficiency of top-emission InP-based green quantum dot light-emitting diodes with optimized angular distribution

作     者：Dong Li Jingwen Feng Youqin Zhu Zhigao Lu Chen Pei Zhuo Chen Yanzhao Li Xinguo Li Xiaoguang Xu Dong Li;Jingwen Feng;Youqin Zhu;Zhigao Lu;Chen Pei;Zhuo Chen;Yanzhao Li;Xinguo Li;Xiaoguang Xu

作者机构：BOE Technology Group Co.Ltd.Beijing100176China 

出 版 物：《Nano Research》 (纳米研究（英文版）)

年 卷 期：2021年第14卷第11期

页      面：4243-4249页

核心收录：

学科分类：08[工学] 0803[工学-光学工程] 

基　　金：This work was supported by the National Key R&D Program of China under Grant No.2016YFB0401700 

主　　题：Cd-free quantum dots quantum dot light-emitting diode(QLED) top-emission angular distribution current efficiency 

摘      要：High resolution and wide color gamut are two key requirements for novel display technologies. Owing to the distinguishing advantages over conventional displays, such as intrinsic wide color gamut and the possibility to achieve high resolution, quantum dot light-emitting diodes (QLED) have drawn considerable attention in recent years. On the other hand, indium phosphide quantum dots (InP QDs) have shown a great potential as a replacement for cadmium selenide (CdSe) QDs in display applications due to the inherent toxicity of cadmium-based QDs. In this study, we investigate a top-emission InP-based green QLED with optimized angular distribution. By adjusting the electrical and optical architecture, the device exhibits improved properties with a maximum current efficiency of 30.1 cd/A and a narrowed full width at half maxima (FWHM)of 31 nm, which are the best results ever reported to our knowledge.