High-Q microresonators on 4H-silicon-carbide-on-insulator platform for nonlinear photonics
作者机构:State Key Laboratory of Functional Materials for InformaticsShanghai Institute of Microsystem and Information TechnologyChinese Academy of Sciences200050 ShanghaiChina. The Center of Materials Science and Optoelectronics EngineeringUniversity of Chinese Academy of Sciences100049 BeijingChina The Extreme Optoelearomechanics Laboratory(XXL)School of Physics and Electronic ScienceEast China Normal University200241 ShanghaiChina. State Key Laboratory of High Field Laser Physics and CAS Center for Excellence in Ultra-intense Laser ScienceShanghai Institute of Optics and Fine MechanicsChinese Academy of Sciences201800 ShanghaiChina
出 版 物:《Light(Science & Applications)》 (光(科学与应用)(英文版))
年 卷 期:2021年第10卷第8期
页 面:1474-1484页
核心收录:
学科分类:070207[理学-光学] 07[理学] 08[工学] 0803[工学-光学工程] 0702[理学-物理学]
基 金:National Key R&D Program of China(2017YFE0131300,2019YFA0705000) National Natural Science Foundation of China(Nos.U1732268,61874128,61851406,11705262,11905282,12004116,12074400,and 11734009) Frontier Science Key Program of CAS(No.QYZDY-SSW-JSC032) Chinese-Austrian Cooperative R&D Project(No.GJHZ201950) Program of Shanghai Academic Research Leader(19XD1404600) Shanghai Sailing Program(No.19YF1456200,19YF1456400) K.C.Wong Education Foundation(GJTD-2019-11)
主 题:resonator carbide nonlinear
摘 要:The realization of high-quality(Q)resonators regardless of the underpinning material platforms has been a ceaseless pursuit,because the high-Q resonators provide an extreme environment for confining light to enable observations of many nonlinear optical phenomenon with high ***,photonic microresonators with a mean Q factor of 6.75×10^(6)were demonstrated on a 4H-silicon-carbide-on-insulator(4H-SiCOI)platform,as determined by a statistical analysis of tens of *** these devices,broadband frequency conversions,including second-,third-,and fourth-harmonic generations have been *** Raman lasing has also been demonstrated in our SiC microresonator for the first time,to the best of our ***,by engineering the dispersion properties of the SiC microresonator,we have achieved broadband Kerr frequency combs covering from 1300 to *** demonstration represents a significant milestone in the development of SiC photonic integrated devices.