Field-emission electron gun for a MEMS electron microscope
作者机构:Department of MicrosystemsFaculty of Microsystem Electronics and PhotonicsWroclaw University of Science and Technologyul.Z.Janiszewskiego 11/1750-372 WroclawPoland
出 版 物:《Microsystems & Nanoengineering》 (微系统与纳米工程(英文))
年 卷 期:2021年第7卷第3期
页 面:139-147页
核心收录:
基 金:The work was financed by the National Science Centre of Poland project number UMO-2016/21/B/ST7/02216
主 题:sharp figuration lifetime
摘 要:This article presents a field-emission electron gun in tended for use in a MEMS(microelectromechanical system)electron *** fabricati on process follows the tech no logy of a miniature device under development built from silicon electrodes and glass *** electron gun contains a silicon cathode with a single very sharp protrusion and a bundle of disordered CNTs deposited on its end(called a sharp silicon/CNT cathode).It was tested in diode and triode con *** the diode con figuration,a low threshold voltage1000V and a high emission current that reached 90 pA were *** 30 min of operation at 900 V,the emission current decreased to 1.6 pA and was stable for at least 40 min,with RMS fluctuation in the anode current lower than 10%.The electron beam spot of the source was observed on the phosphor *** the diode configuration,the spot size was the same as the emission area(~10 pm)z which is a satisfactory *** the triode configuration,an extraction electrode(gate)control function was *** gate limited the emission current and elongated the lifetime of the gun when the current limit was ***,the electron beam current fluctuations at the anode could be reduced to〜1%by using a feedback loop circuit that controls the gate voltage,regulating the anode *** developed sharp silicon/CNT cathodes were used to test the MEMS electron source demonstrator,a key component of the MEMS electron microscope,operating under atmospheric pressure *** of the phosphor layer(ZnS:Ag)deposited on the thin silicon nitride membrane(anode)was observed.