Physical Properties of SiC Nanostructure for Optoelectronics Applications

作     者：Mayyadah H.Mohsin Najwan H.Numan Evan T.Salim Makram A.Fakhri 

作者机构：Applied Science DepartmentUniversity of Technology-IraqBaghdad10066Iraq Laser and Optoelectronic Engineering DepartmentUniversity of Technology-IraqBaghdad10066Iraq 

出 版 物：《Journal of Renewable Materials》 (可再生材料杂志（英文）)

年 卷 期：2021年第9卷第9期

页      面：1519-1530页

核心收录：

学科分类：080901[工学-物理电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080401[工学-精密仪器及机械] 0804[工学-仪器科学与技术] 0803[工学-光学工程] 

主　　题：Pulsed Laser deposition nanostructure 4H-SiC PLD heterostructure nanofilms 

摘      要：A SiC nanofilms have been deposited and investigated on quartz and silicon substrates using pulsed laser deposition technique with the 300 pulses of Nd:YAG laser at two different laser wavelengths of 1064 nm and 532 *** structural,morphological,and optical properties of the deposited nanostructure SiC were prepared and characterized as a function of the wavelengths of the used *** structural result shows four different pecks at(111),(200),(220),and(311)planes related to Nano *** transmission result presents that the optical energy gap value for the SiC nanostructure is depended on the wavelength of the used laser and it is found about the range(3.03 eV–3.23 eV).The investigations of the SEM and AFM show that the prepared SiC Nano-films having a grain size range(36.34–48.75)nm and roughness about 4.462 to 3.062 ***/Si hetero-junction devices show an enhanced performance at 532 nm.