The Fabrication and Characterization of Polarization Insensitive Semiconductor Optical Amplifier
The Fabrication and Characterization of Polarization Insensitive Semiconductor Optical Amplifier作者机构：State Key Lab. on Integrated OptoelectronicsInstitute of Semiconductors) Chinese Academy of Sciences Beijing 100083 China
出 版 物：《光学学报》 (Acta Optica Sinica)
年 卷 期：2003年第23卷第S1期
页 面：451-452页
核心收录：
学科分类：070207[理学-光学] 07[理学] 08[工学] 0803[工学-光学工程] 0702[理学-物理学]
基 金：This work was supported by the major state basic research program under grant No. G2000036606
主 题：polarization sensitivity antireflection coatings
摘 要：An angled facet strained bulk InGaAs SOA has been designed and fabricated. A device with double-layer antireflection coatings had 2dB polarization sensitivity and 0.5dB gain ripple.
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