High-responsivity solar-blind photodetector based on MOCVD-grown Si-dopedβ-Ga_(2)O_(3)thin film

作     者：Yu-Song Zhi Wei-Yu Jiang Zeng Liu Yuan-Yuan Liu Xu-Long Chu Jia-Hang Liu Shan Li Zu-Yong Yan Yue-Hui Wang Pei-Gang Li Zhen-Ping Wu Wei-Hua Tang 支钰崧;江为宇;刘增;刘媛媛;褚旭龙;刘佳航;李山;晏祖勇;王月晖;李培刚;吴真平;唐为华

作者机构：Laboratory of Information Functional Materials and DevicesSchool of Science&State Key Laboratory of Information Photonics and Optical CommunicationsBeijing University of Posts and TelecommunicationsBeijing 100876China Center of Materials Science and Optoelectronics EngineeringUniversity of Chinese Academy of SciencesBeijing 100049China The Engineering Research Center for Semiconductor Integrated TechnologyInstitute of SemiconductorsChinese Academy of SciencesBeijing 100083China China Aerospace System Simulation Technology Co.Ltd.(Beijing)Beijing 100195China College of Electronic and Optical Engineering&College of MicroelectronicsNanjing University of Posts and TelecommunicationsNanjing 210023China 

出 版 物：《Chinese Physics B》 (中国物理B（英文版）)

年 卷 期：2021年第30卷第5期

页      面：595-601页

核心收录：

学科分类：081702[工学-化学工艺] 080901[工学-物理电子学] 07[理学] 0809[工学-电子科学与技术（可授工学、理学学位）] 070205[理学-凝聚态物理] 08[工学] 0817[工学-化学工程与技术] 080401[工学-精密仪器及机械] 080501[工学-材料物理与化学] 0804[工学-仪器科学与技术] 0805[工学-材料科学与工程（可授工学、理学学位）] 0803[工学-光学工程] 0702[理学-物理学] 

基　　金：the National Natural Science Foundation of China(Grant Nos.61774019 and 51572033) the Fund of State Key Laboratory of Information Photonics and Optical Communications(BUPT) the Fundamental Research Funds for the Central Universities,China 

主　　题：Si-dopedβ-Ga_(2)O_(3) metal-organic chemical vapor deposition(MOCVD) solar-blind high responsivity 

摘      要：Si-dopedβ-Ga_(2)O_(3)films are fabricated through metal-organic chemical vapor deposition(MOCVD).Solar-blind ultraviolet(UV)photodetector(PD)based on the films is fabricated by standard photolithography,and the photodetection properties are *** results show that the photocurrent increases to 11.2 mA under 200μW·cm^(-2)254 nm illumination and±20 V bias,leading to photo-responsivity as high as 788 A·W^(-1).The Si-dopedβ-Ga2O3-based PD is promised to perform solar-blind photodetection with high performance.