Stress Relaxation Behaviors of Monocrystalline Silicon Coated with Amorphous SiO_(2) Film:A Molecular Dynamics Study
与非结晶的 SiO\ 涂的 Monocrystalline 硅的压力松驰行为(_{ 2 }\) 电影: 分子的动力学研究作者机构：State Key Laboratory for Mechanical Behavior of MaterialsXi’an Jiaotong UniversityXi’an710049China School of Materials Science and EngineeringTaiyuan University of Science and TechnologyTaiyuan030024China School of Mechanical and Electrical EngineeringXiamen University Tan Kah Kee CollegeZhangzhou363105China School of Mechanical and Electrical EngineeringChina University of Mining and TechnologyXuzhou221116China
出 版 物：《Acta Mechanica Solida Sinica》 (固体力学学报（英文版）)
年 卷 期：2021年第34卷第4期
页 面：506-515页
核心收录：
学科分类：08[工学] 080102[工学-固体力学] 0801[工学-力学（可授工学、理学学位）]
基 金：The authors thank Zhi Chen for his help in radial distribution function.This study was supported by the National Natural Science Foundation of China(Grant Numbers 51375364,51475359,and 51505479) Natural Science Foundation of Jiangsu Province of China(BK20150184)
主 题：Nanoindentation Stress relaxation Single crystal silicon Amorphous SiO_(2)film Molecular dynamics simulation
摘 要：Long-lasting constant loading commonly exists in silicon-based microelectronic contact,as well as the chemical mechanical polishing *** this work,the stress relaxation analysis of single crystal silicon coated with an amorphous SiO_(2) film is performed by varying the maximum indentation depth using molecular dynamics *** is found that during holding,the applied indentation force declines sharply at the beginning and then steadily towards the end of the holding *** stress relaxation amount of bilayer composites increases as the maximum indentation depth *** is also found that the deformation features of SiO_(2) film and silicon substrate during holding are inherited from the loading *** SiO_(2) film during holding is further densified when the maximum indentation depth is equal to or less than a certain value(5.5 nm for the 0.8-nm film).The amount of generated phases and phase distributions of silicon substrate during holding are affected by the plastic deformation of silicon during loading.
维普期刊数据库