Thermal stress reduction of GaAs epitaxial growth on V-groove patterned Si substrates

作     者：杨泽园 王俊 武国峰 黄永清 任晓敏 季海铭 罗帅 Ze-Yuan Yang;Jun Wang;Guo-Feng Wu;Yong-Qing Huang;Xiao-Min Ren;Hai-Ming Ji;Shuai Luo

作者机构：State Key Laboratory of Information Photonics and Optical CommunicationsBeijing University of Posts and TelecommunicationsBeijing 100876China Center of Materials Science and Optoelectronics EngineeringUniversity of Chinese Academy of SciencesBeijing 100049China 

出 版 物：《Chinese Physics B》 (中国物理B（英文版）)

年 卷 期：2021年第30卷第1期

页      面：359-364页

核心收录：

学科分类：08[工学] 0805[工学-材料科学与工程（可授工学、理学学位）] 0704[理学-天文学] 

基　　金：Project supported by the National Natural Science Foundation of China(Grant Nos.61874148,61974141,and 61674020) the Beijing Natural Science Foundation,China(Grant No.4192043) the State Key Laboratory of Information Photonics and Optical Communications(Beijing University of Posts and Telecommunications),China(Grant No.IPOC2018ZT01) the 111 Project of China(Grant No.B07005)。 

主　　题：GaAs on Si thermal stress V-groove finite-element method 

摘      要：We investigate the thermal stresses for GaAs layers grown on V-groove patterned Si substrates by the finite-element method. The results show that the thermal stress distribution near the interface in a patterned substrate is nonuniform,which is far different from that in a planar substrate. Comparing with the planar substrate, the thermal stress is significantly reduced for the Ga As layer on the patterned substrate. The effects of the width of the V-groove, the thickness, and the width of the SiO_(2) mask on the thermal stress are studied. It is found that the SiO_(2) mask and V-groove play a crucial role in the stress of the Ga As layer on Si substrate. The results indicate that when the width of V-groove is 50 nm, the width and the thickness of the SiO_(2) mask are both 100 nm, the Ga As layer is subjected to the minimum stress. Furthermore,Comparing with the planar substrate, the average stress of the Ga As epitaxial layer in the growth window region of the patterned substrate is reduced by 90%. These findings are useful in the optimal designing of growing high-quality Ga As films on patterned Si substrates.