Influence of sub-bandgap illumination on space charge distribution in CdZnTe detector

作     者：Rongrong Guo Jinhai Lin Lili Liu Shiwei Li Chen Wang Feibin Xiong Haijun Lin 郭榕榕;林金海;刘莉莉;李世韦;王尘;熊飞兵;林海军

作者机构：Fujian Provincial Key Laboratory of Optoelectronic Technology and DevicesXiamen University of TechnologyXiamen 361024China 

出 版 物：《Chinese Physics B》 (中国物理B（英文版）)

年 卷 期：2021年第30卷第3期

页      面：378-385页

核心收录：

学科分类：082704[工学-辐射防护及环境保护] 08[工学] 0827[工学-核科学与技术] 

基　　金：Project supported by the Young Scientists Fund of the National Natural Science Foundation of China(Grant Nos.51702271 and 61904155) the Natural Science Foundation of Fujian Province,China(Grant No.2020J05239) 

主　　题：CdZnTe detector sub-bandgap illumination space charge charge collection efficiency 

摘      要：The space charge accumulation in CdZnTe crystals seriously affects the performance of high-flux pulse *** influence of sub-bandgap illumination on the space charge distribution and device performance in CdZnTe crystals were studied theoretically by Silvaco TCAD software *** sub-bandgap illumination with a wavelength of 890 nm and intensity of 8×10−8 W/cm2 were used in the simulation to explore the space charge distribution and internal electric field distribution in CdZnTe *** simulation results show that the deep level occupation faction is manipulated by the sub-bandgap illumination,thus space charge concentration can be reduced under the bias voltage of 500 V.A flat electric field distribution is obtained,which significantly improves the charge collection efficiency of the CdZnTe ***,premised on the high resistivity of CdZnTe crystal,the space charge concentration in the crystal can be further reduced with the wavelength of 850 nm and intensity of 1×10−7 W/cm2 *** electric field distribution is flatter and the carrier collection efficiency of the device can be improved more effectively.