Dissolution-precipitation growth of uniform and clean two dimensional transition metal dichalcogenides
Dissolution-precipitation growth of uniform and clean two dimensional transition metal dichalcogenides作者机构:Shenzhen Geim Graphene CenterTsinghua-Berkeley Shenzhen Institute and Tsinghua Shenzhen International Graduate SchoolTsinghua University Shenyang National Laboratory for Materials Sciences Institute of Metal ResearchChinese Academy of Sciences Department of Physics Southern University of Science and Technology
出 版 物:《National Science Review》 (国家科学评论(英文版))
年 卷 期:2021年第8卷第3期
页 面:108-116页
核心收录:
学科分类:08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程(可授工学、理学学位)]
基 金:supported by the National Natural Science Foundation of China (51722206, 51991340, 51991343, 11974156 and51920105002) the Youth 1000-Talent Program of China the National Key R&D Program (2018YFA0307200) the Guangdong Innovative and Entrepreneurial Research Team Program(2017ZT07C341) the Guandong International Science Collaboration Project (2019A050510001) the Bureau of Industry and Information Technology of Shenzhen for the ‘2017 Graphene Manufacturing Innovation Center Project’(201901171523) the Development and Reform Commission of Shenzhen Municipality for the development of the ‘Low-Dimensional Materials and Devices’ discipline the assistance of SUSTech Core Research Facilities support from Pico-Centre that receives support from the Presidential fund and the Development and Reform Commission of Shenzhen Municipality
主 题:dissolution-precipitation growth two dimensional materials transition metal dichalcogenides uniform clean
摘 要:Two dimensional transition metal dichalcogenides(TMDCs) have attracted much interest and shown promise in many applications.However,it is challenging to obtain uniform TMDCs with clean surfaces,because of the difficulties in controlling the way the reactants are supplied to the reaction in the current chemical vapor deposition growth process.Here,we report a new growth approach called’dissolution-precipitation’(DP) growth,where the metal sources are sealed inside glass substrates to control their feeding to the reaction.Noteworthy,the diffusion of metal source inside glass to its surface provides a uniform metal source on the glass surface,and restricts the TMDC growth to only a surface reaction while eliminating unwanted gas-phase reaction.This feature gives rise to highly uniform monolayer TMDCs with a clean surface on centimeter-scale substrates.The DP growth works well for a large variety of TMDCs and their alloys,providing a solid foundation for the controlled growth of clean TMDCs by the fine control of the metal source.