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Siliconizing Formation Mechanism and Its Property by Slurry Pack Cementation on Electro-deposited Nickel Layer into Copper Matrix

Siliconizing Formation Mechanism and Its Property by Slurry Pack Cementation on Electro-deposited Nickel Layer into Copper Matrix

作     者:王红星 WANG Hongxing 1,CHU Chenglin1,SHENG Xiaobo1,LIN Pinghua1.2,DONG Yinsheng1 (1. School of Materials Science and engineering,Southeast University,Nanjing 211189,China;2. School of Materials Science and engineering,Hehai University,Nanjing 210098,China)

作者机构:School of Materials Science and engineeringSoutheast University 

出 版 物:《Journal of Wuhan University of Technology(Materials Science)》 (武汉理工大学学报(材料科学英文版))

年 卷 期:2009年第24卷第6期

页      面:883-887页

核心收录:

学科分类:080503[工学-材料加工工程] 08[工学] 0805[工学-材料科学与工程(可授工学、理学学位)] 

基  金:Funded by the Natural Science Fundation of Southeast University(9212002232) 

主  题:copper silicide coating Ni2Si /Ni31Si12 intermetallic compound coefficient of friction 

摘      要:Silicide coating was prepared on electro-deposited nickel layer by the slurry pack cementation process on copper matrix at 1173 K for 12 h using SiO2 as Si source, pure Al powder as reducer, a dual activator of NaF+NH4Cl and albumen (egg white) as cohesive agent. Microstructure, properties and siliconizing mechanism of silicide coating were discussed. The experimental results show that the silicide coating with 220 μm thickness is mainly composed of a Ni2Si phase and a small amount of Ni31Si12 phase. Its mean microhardness (HV 790) is ten times than that of copper substrate (HV 70). The coefficient of friction decreases from 0.8 of pure copper to about 0.3 of the siliconzed sample. SiF2, SiCl2 and SiCl3 are responsible for the transportation and deposition of Si during the slurry pack cementation process.

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