Energy band adjustment of 808 nm GaAs laser power converters via gradient doping

作     者：Yingjie Zhao Shan Li Huixue Ren Shaojie Li Peide Han Yingjie Zhao;Shan Li;Huixue Ren;Shaojie Li;Peide Han

作者机构：State Key Laboratory of Integrated OptoelectronicsInstitute of SemiconductorsChinese Academy of SciencesBeijing 100083China School of ElectronicElectrical and Communication EngineeringUniversity of Chinese Academy of SciencesBeijing 100049China 

出 版 物：《Journal of Semiconductors》 (半导体学报（英文版）)

年 卷 期：2021年第42卷第3期

页      面：73-79页

核心收录：

学科分类：080802[工学-电力系统及其自动化] 080901[工学-物理电子学] 0808[工学-电气工程] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080401[工学-精密仪器及机械] 0804[工学-仪器科学与技术] 0803[工学-光学工程] 

基　　金：This work was supported by the National Key R&D Program of China(No.2018YFB1500500) also supported by Ally Fund of Chinese Academy of Sciences(No.Y072051002) 

主　　题：gradient doping laser power converters(LPCs) energy band adjustment numerical simulation 

摘      要：The gradient doping regions were employed in the emitter layer and the base layer of GaAs based laser power converters(LPCs).Silvaco TCAD was used to numerically simulate the linear gradient doping and exponential gradient doping structure,and analyze the transport process of photogenerated *** band adjustment via gradient doping improved the separation and transport efficiency of photogenerated carriers and reduced the total recombination rate of GaAs *** with traditional structure of LPCs,the photoelectric conversion efficiency of LPCs with linear and exponential gradient doping structure were improved from 52.7%to 57.2%and 57.7%,respectively,under 808 nm laser light at the power density of 1 W/cm^(2).