Properties and photodetector applications of two-dimensional black arsenic phosphorus and black phosphorus
Properties and photodetector applications of two-dimensional black arsenic phosphorus and black phosphorus作者机构：Shenyang National Laboratory for Materials Science Institute of Metal Research Chinese Academy of Sciences School of Materials Science and Engineering University of Science and Technology of China School of Physical Science and Technology ShanghaiTech University Shenzhen Geim Graphene Center Shenzhen International Graduate School Tsinghua University
出 版 物：《Science China(Information Sciences)》 (中国科学:信息科学(英文版))
年 卷 期：2021年第64卷第4期
页 面：120-133页
核心收录：
学科分类：0810[工学-信息与通信工程] 0808[工学-电气工程] 08[工学] 0803[工学-光学工程] 0812[工学-计算机科学与技术（可授工学、理学学位）]
主 题：black arsenic phosphorus crystal structure optical property electrical property photodetector
摘 要：Two-dimensional(2D) black arsenic phosphorus(b-AsP), as an alloy of black phosphorus(bP) with arsenic, has attracted great attention because of its outstanding electronic and optical properties,including high carrier mobility, tunable bandgap and in-plane anisotropy. B-AsP has a smaller bandgap(0.15–0.3 eV) than the b-P bandgap(0.3–2.0 eV), and thus can be used for mid-infrared *** addition, both of them can form various van der Waals(vdW) heterojunctions with other 2D materials to realize novel functional optoelectronic devices. Here, we compare the basic characteristics of b-AsP and b-P, including crystal structure, optical properties, band structure, electrical properties and stability, and we summarize the update progress of b-AsP in photo detection, including representatives of phototransistor and photodiode devices. In the last part, the future research directions are discussed.
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