Characterization of different-Al-content AlGaN/GaN heterostructures on sapphire
Characterization of different-Al-content AlGaN/GaN heterostructures on sapphire作者机构：Beijing National Laboratory of Condensed Matter Physics Institute of Physics Chinese Academy of Sciences Beijing China
出 版 物：《Science China(Physics,Mechanics & Astronomy)》 (中国科学：物理学、力学、天文学（英文版）)
年 卷 期：2010年第53卷第1期
页 面：49-53页
核心收录：
学科分类：080903[工学-微电子学与固体电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 07[理学] 070205[理学-凝聚态物理] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 0702[理学-物理学]
基 金：Supported by the National Natural Science Foundation of China (Grant No.10574148) the National High-Tech Research and Development Program of China (Grant Nos. 2006AA03A106 and 2006AA03A107) the National Basic Research Program of China (Grant No. 2006CB921300)
主 题：AlGaN Hall-effect luminescence
摘 要：Al x Ga 1-x N/GaN high-electron-mobility transistor (HEMT) structures with Al composition ranging from x = 0.13 to 0.36 are grown on sapphire substrates by low-pressure metalorganic chemical vapor deposition (LP-MOCVD). The effects of Al content on crystal quality, surface morphology, optical and electrical characteristics of the AlGaN/GaN heterostructures have been analyzed. Although high Al-content (36%) heterostructure exhibits a distinguished photoluminescence peak related to recombination between the two-dimensional electron gas and photoexcited holes (2DEG-h), its crystal quality and rough surface morphology are poor. 2DEG mobility increases with the Al content up to 26% and then it apparently decreases for high Al-content (36%) AlGaN/GaN heterostructure. The increase of sheet carrier density with the increase of Al content has been observed. A high mobility at room temperature of 2105 cm 2 /V s with a sheet carrier density of n s = 1.10 × 10 13 cm -2 , for a 26% Al-content AlGaN/GaN heterostructure has been obtained, which is approaching state-of-the-art for HEMT grown on SiC. Sheet resistance as low as 274 Ω/□ has also been achieved.
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