Extending the resolution limits of nanoshape imprint lithography using molecular dynamics of polymer crosslinking

作     者：Anshuman Cherala Parth N.Pandya Kenneth M.Liechti S.V.Sreenivasan 

作者机构：NASCENT Engineering Research CenterThe University of Texas at AustinAustinTXUSA 

出 版 物：《Microsystems & Nanoengineering》 (微系统与纳米工程（英文）)

年 卷 期：2021年第7卷第1期

页      面：141-150页

核心收录：

学科分类：07[理学] 070205[理学-凝聚态物理] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 0702[理学-物理学] 

基　　金：funded by the National Science Foundation the National Science Foundation(NSF)(Grant Numbers EEC-1160494 and ECCS-1542159) 

主　　题：lithography shaped corners 

摘      要：Emerging nanoscale applications in energy,electronics,optics,and medicine can exhibit enhanced performance by incorporating nanoshaped structures(nanoshape structures here are defined as shapes enabled by sharp corners with radius of curvature5 nm).Nanoshaped fabrication at high-throughput is well beyond the capabilities of advanced optical *** the highest-resolution e-beams and large-area e-beams have a resolution limit of 5 and 18 nm half-pitch lines or 20 nm half-pitch holes,respectively,their low throughput necessitates finding other fabrication *** using nanoimprint lithography followed by metal-assisted chemical etching,diamond-like nanoshapes with~3 nm radius corners and 100 nm half-pitch over large areas have been previously demonstrated to improve the nanowire capacitor performance(by~90%).In future dynamic random-access memory(DRAM)nodes(with DRAM being an exemplar CMOS application),the implementation of nanowire capacitors scaled to15 nm halfpitch is *** scale nanoshape imprint lithography down to these half-pitch values,the previously established atomistic simulation framework indicates that the current imprint resist materials are unable to retain the nanoshape structures needed for DRAM *** this study,the previous simulation framework is extended to study improved shape retention by varying the resist formulations and by introducing novel bridge structures in nanoshape *** simulation study has demonstrated viable approaches to sub-10 nm nanoshaped imprinting with good shape retention,which are matched by experimental data.