离子辐照对nc-Si:H薄膜结构和光学带隙的调制研究(英文)

作     者：朱亚滨 

出 版 物：《IMP & HIRFL Annual Report》 (中国科学院近代物理研究所和兰州重离子研究装置年报(英文版))

年 卷 期：2011年第0期

页      面：77-78页

学科分类：08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 0827[工学-核科学与技术] 082701[工学-核能科学与工程] 

摘      要：Hydrogenated nano-crystalline silicon (nc-Si∶H) film is of much higher light absorption coefficient than that of mono-crystalline silicon (c-Si), and exhibits better electrical transport characteristics and higher resistance to the light-induced degradation than that of hydrogenated amorphous silicon (a-Si∶H) film. These remarkable photoelectric properties make nc-Si∶H film being widely applied in solar cells and thin film transistors, and the modifications of nc-Si∶H film on the structure and properties have attracted much attention. However, the modification of nc-Si∶H films with ion irradiation has not yet been well studied.